QRE1113
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
OPTO CPLR, PHOTOTRANSISTOR, DIP-4; Sensor Output:Phototransistor; Sensor Mounting:Through Hole; Sensing Distance:5mm; Forward Current If:50mA; Reverse Voltage Vr:5V; Collector Emitter Voltage V(br)ceo:30V; Forward Voltag
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Factory Pack Quantity | 1600 |
| Fall Time | 20 us |
| Height | 1.7 mm |
| If - Forward Current | 20 mA |
| Length | 3.6 mm |
| Manufacturer | ON Semiconductor |
| Maximum Collector Current | 20 mA |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Output Type | Phototransistor |
| Packaging | Tube |
| Pd - Power Dissipation | 75 mW |
| Product Category | Optical Switches, Reflective, Phototransistor Output |
| Rise Time | 20 us |
| RoHS | Details |
| Sensing Distance | 1 mm |
| Sensing Method | Reflective |
| Series | QRE1113 |
| Unit Weight | 0.002187 oz |
| Vf - Forward Voltage | 1.2 V |
| Vr - Reverse Voltage | 5 V |
| Wavelength | 940 nm |
| Width | 2.9 mm |
| Mounting Type | Through Hole |
| Number of Pins | 4 |
| Operating Temperature Range | -40 →+85°C |
| Output Device | Phototransistor |
| Package Type | Miniature |
| Typical Fall Time | 20µs |
| Typical Rise Time | 20µs |
| Вес, г | 0.5 |
