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MBR30H100CTG

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340 руб.

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Добавить в корзину 2 шт. на сумму 680 руб.

Номенклатурный номер: 8024057325

Бренд: ON Semiconductor***

Описание

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange.

Технические параметры

Base Part Number	MBR30H100CT
Current - Average Rectified (Io) (per Diode)	15A
Current - Reverse Leakage @ Vr	4.5ВµA @ 100V
Diode Configuration	1 Pair Common Cathode
Diode Type	Schottky
Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Operating Temperature - Junction	175В°C(Max)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Series	SWITCHMODEв(ў
Speed	Fast Recovery =< 500ns, > 200mA(Io)
Supplier Device Package	TO-220AB
Voltage - DC Reverse (Vr) (Max)	100V
Voltage - Forward (Vf) (Max) @ If	800mV @ 15A
Diode Technology	Schottky Barrier
Maximum Continuous Forward Current	30A
Maximum Forward Voltage Drop	880mV
Number of Elements per Chip	2
Package Type	TO-220
Peak Non-Repetitive Forward Surge Current	250A
Peak Reverse Repetitive Voltage	100V
Pin Count	3
Rectifier Type	Schottky Rectifier
Вес, г	2.041