NZT660
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см. техническую документацию
см. техническую документацию
210 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
160 руб.
от 10 шт. —
128 руб.
от 26 шт. —
113.53 руб.
Добавить в корзину 2 шт.
на сумму 420 руб.
Описание
Электроэлемент
Trans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NZT660)
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Collector-Emitter Saturation Voltage | 550 mV |
| Configuration | Single |
| Continuous Collector Current | 3 A |
| DC Current Gain hFE Max | 300 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 4000 |
| Gain Bandwidth Product fT | 75 MHz |
| Height | 1.6 mm |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Part # Aliases | NZT660_NL |
| Pd - Power Dissipation | 2 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | NZT660 |
| Transistor Polarity | PNP |
| Width | 3.56 mm |
| Brand: | onsemi/Fairchild |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 550 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3 A |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 75 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | NZT660_NL |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | NZT660 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | -80 V |
| Maximum Collector Emitter Voltage | -60 V |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Power Dissipation | 2 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223(SC-73) |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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