IRF9510PBF, Trans MOSFET P-CH 100V 4A 3-Pin(3+Tab) TO-220AB

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Номенклатурный номер: 8003193042

Артикул: IRF9510PBF

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор: P-MOSFET, полевой, -100В, -2,8А, 43Вт, TO220AB Характеристики

Base Product Number	IRF9510 ->
Current - Continuous Drain (Id) @ 25В°C	4A (Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Other Related Documents	http://www.vishay.com/docs/88869/packaging.pdf
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	43W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.4A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
FET Feature	-
Manufacturer	Vishay Siliconix
Packaging	Tube
Part Status	Active
Series	-
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	4 A
Maximum Drain Source Resistance	1.2 Ω
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	43 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	8.7 nC @ 10 V
Width	4.7mm
Transistor Polarity	P Channel; Continuous Drain Current Id
Вес, кг	193