BD912, Trans GP BJT PNP 100V 15A 90000mW 3-Pin(3+Tab) TO-220AB Tube
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см. техническую документацию
см. техническую документацию
5092 шт., срок 7-9 недель
120 руб.
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111 руб.
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Альтернативные предложения2
Описание
Semiconductor - Discrete > Transistors > BJT - General Purpose
Описание Транзистор p-n-p 100В 15A 90Вт TO220 Характеристики | Категория | Транзистор |
| Тип | биполярный |
| Вид | PNP |
Технические параметры
| Base Product Number | BD912 -> |
| Current - Collector (Ic) (Max) | 15A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5A, 4V |
| ECCN | EAR99 |
| Frequency - Transition | 3MHz |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power - Max | 90W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2.5A, 10A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Brand | STMicroelectronics |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 15 |
| DC Current Gain hFE Max | 150 |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product fT | 3 MHz |
| Height | 9.15 mm(Max) |
| Length | 10.4 mm(Max) |
| Manufacturer | STMicroelectronics |
| Maximum DC Collector Current | 15 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Pd - Power Dissipation | 90 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | 500V Transistors |
| Transistor Polarity | PNP |
| Width | 4.6 mm(Max) |
| Brand: | STMicroelectronics |
| Collector- Base Voltage VCBO: | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 3 V |
| Configuration: | Single |
| DC Collector/Base Gain hFE Min: | 15 |
| DC Current Gain hFE Max: | 150 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 3 MHz |
| Manufacturer: | STMicroelectronics |
| Maximum DC Collector Current: | 15 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 90 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BD912 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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