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SI1029X-T1-GE3, Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R

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36 руб.

Кратность заказа 3000 шт.

от 6000 шт. — 34 руб.

от 15000 шт. — 31 руб.

Добавить в корзину 3000 шт. на сумму 108 000 руб.

Номенклатурный номер: 8003311726

Артикул: SI1029X-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Forward Transconductance - Min:	200 mS, 100 mS
Id - Continuous Drain Current:	500 mA
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SC-89-6
Part # Aliases:	SI1029X-GE3
Pd - Power Dissipation:	280 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	750 pC, 1.7 nC
Rds On - Drain-Source Resistance:	1.4 Ohms, 4 Ohms
Series:	SI1
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel, P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	20 ns, 35 ns
Typical Turn-On Delay Time:	15 ns, 20 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Channel Mode	Enhancement
Channel Type	N, P
Maximum Continuous Drain Current	190 mA, 300 mA
Maximum Drain Source Resistance	3 Ω, 8 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	250 mW
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SC-89-6
Pin Count	6
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	1700 nC @ 15 V, 750 nC @ 4.5 V
Width	1.7mm
Вес, г	1