IRFD9110PBF, Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP

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81 руб.

Мин. кол-во для заказа 460 шт.

от 850 шт. — 78 руб.

Добавить в корзину 460 шт. на сумму 37 260 руб.

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Номенклатурный номер: 8003311752

Артикул: IRFD9110PBF

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор: P-MOSFET, полевой, -100В, -0,49А, 1,3Вт, DIP4 Характеристики

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single Dual Drain
Factory Pack Quantity	2500
Fall Time	27 ns
Height	3.37 mm
Id - Continuous Drain Current	700 mA
Length	5 mm
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	HVMDIP-4
Packaging	Tube
Pd - Power Dissipation	1.3 W
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	1.2 Ohms
Rise Time	27 ns
RoHS	Details
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	-100 V
Vgs - Gate-Source Voltage	20 V
Width	6.29 mm
Channel Type	P
Maximum Continuous Drain Current	700 mA
Maximum Drain Source Resistance	1.2 Ω
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	1.3 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	HVMDIP
Pin Count	4
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	8.7 nC @ 10 V
Вес, кг	192