IXGH16N170, Trans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD

210 шт., срок 7-9 недель

2 310 руб.

Кратность заказа 30 шт.

от 60 шт. — 2 300 руб.

от 120 шт. — 2 220 руб.

Добавить в корзину 30 шт. на сумму 69 300 руб.

Альтернативные предложения1

Номенклатурный номер: 8003325203

Артикул: IXGH16N170

Бренд: Littelfuse

Semiconductor - Discrete > Power Discrete > Transistor - IGBT Component

Trans IGBT Chip N-CH 1700V 32A 190W 3-Pin(3+Tab) TO-247AD

Brand	IXYS
Collector- Emitter Voltage VCEO Max	1.7 kV
Collector-Emitter Saturation Voltage	2.7 V
Configuration	Single
Continuous Collector Current	32 A
Continuous Collector Current at 25 C	32 A
Continuous Collector Current Ic Max	80 A
Factory Pack Quantity	30
Gate-Emitter Leakage Current	100 nA
Height	21.46 mm
Length	16.26 mm
Manufacturer	IXYS
Maximum Gate Emitter Voltage	+/-20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Operating Temperature Range	-55 C to+150 C
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	190 W
Product Category	IGBT Transistors
RoHS	Details
Series	IXGH16N170
Technology	Si
Unit Weight	0.229281 oz
Width	5.3 mm
Automotive	No
Channel Type	N
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Collector-Emitter Voltage (V)	1700
Maximum Continuous Collector Current (A)	32
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	190
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Standard Package Name	TO
Supplier Package	TO-247AD
Tab	Tab
Typical Collector Emitter Saturation Voltage (V)	2.7
Вес, г	1