ZXMS6005DGTA, Транзистор N-MOSFET, IntelliFET™, полевой, 60В, 2А, 1,3Вт, SOT223
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Описание
Описание Транзистор N-MOSFET, IntelliFET™, полевой, 60В, 2А, 1,3Вт, SOT223 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Supplier Package | SOT-223 |
| Standard Package Name | SOT |
| Mounting | Surface Mount |
| Package Height | 1.65(Max) |
| Package Length | 6.7(Max) |
| Package Width | 3.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 19 us |
| Id - Continuous Drain Current: | 2 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-223-3 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 200 mOhms |
| Rise Time: | 14 us |
| Series: | ZXMS600 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | IntelliFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 34 us |
| Typical Turn-On Delay Time: | 6 us |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Вес, г | 0.14 |
Техническая документация
Datasheet
pdf, 456 КБ
Datasheet ZXMS6005DGTA
pdf, 452 КБ
