CSD19535KCS
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Описание
Электроэлемент
100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm 3-TO-220 -55 to 175
Технические параметры
Brand | Texas Instruments |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 5 ns |
Forward Transconductance - Min | 274 S |
Height | 16.51 mm |
Id - Continuous Drain Current | 50 A |
Length | 10.67 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 300 W |
Product Category | MOSFET |
Qg - Gate Charge | 78 nC |
Rds On - Drain-Source Resistance | 3.6 mOhms |
Rise Time | 15 ns |
RoHS | Details |
Series | CSD19535KCS |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Unit Weight | 0.211644 oz |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Width | 4.7 mm |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 5 ns |
Forward Transconductance - Min: | 274 S |
Id - Continuous Drain Current: | 187 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 78 nC |
Rds On - Drain-Source Resistance: | 3.6 mOhms |
Rise Time: | 15 ns |
Series: | CSD19535KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 60 ns |
Typical Turn-On Delay Time: | 32 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Вес, г | 1.973 |
Техническая документация
Документация
pdf, 845 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов