BC857CT-7-F, Trans GP BJT PNP 45V 0.1A 150mW 3-Pin SOT-523 T/R

Изображения служат только для ознакомления,
см. техническую документацию

5 руб.

Мин. кол-во для заказа 9000 шт.

Кратность заказа 3000 шт.

9000 шт. на сумму 45 000 руб.

Плати частями
от 11 250 руб. × 4 платежа

Номенклатурный номер: 8003813270

Артикул: BC857CT-7-F

Бренд: DIODES INC.

Semiconductor - Discrete > Transistors > BJT - General Purpose

Maximum Collector Base Voltage	-50 V
Maximum Collector Emitter Voltage	45 V
Maximum DC Collector Current	100 mA
Maximum Emitter Base Voltage	-5 V
Maximum Operating Temperature	+150 C
Maximum Power Dissipation	150 mW
Minimum DC Current Gain	420
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-523(SC-89)
Pin Count	3
Transistor Configuration	Single
Transistor Type	PNP
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	650 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	420 at-2 mA, -5 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-523-3
Pd - Power Dissipation:	150 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC857C
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Case	SOT523
Collector current	0.1A
Collector-emitter voltage	45V
Current gain	420…800
Frequency	100MHz
Kind of package	reel, tape
Manufacturer	DIODES INCORPORATED
Mounting	SMD
Polarisation	bipolar
Power dissipation	0.15W
Type of transistor	PNP
Вес, г	1