SI4948BEY-T1-GE3, Транзистор: P-MOSFET; полевой; -60В; -2,4А; Idm: -25А; 0,95Вт; SO8

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270 руб.

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Добавить в корзину 1 шт. на сумму 270 руб.

Номенклатурный номер: 8003894915

Артикул: SI4948BEY-T1-GE3

Описание Транзистор: P-MOSFET; полевой; -60В; -2,4А; Idm: -25А; 0,95Вт; SO8

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	2500
Id - Continuous Drain Current:	3.1 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SOIC-8
Part # Aliases:	SI4948BEY-GE3
Pd - Power Dissipation:	2.4 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	22 nC
Rds On - Drain-Source Resistance:	120 mOhms
Series:	SI4
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	3.1 A
Maximum Drain Source Resistance	150 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	2.4 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOIC
Pin Count	8
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	14.5 nC @ 10 V
Width	4mm
Вес, г	0.127