FDPF18N50T, Транзистор: N-MOSFET
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Описание
Описание Транзистор: N-MOSFET, полевой, 500В, 10,8А, 38,5Вт, TO220FP Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 90 ns |
| Forward Transconductance - Min | 25 S |
| Height | 16.07 mm |
| Id - Continuous Drain Current | 18 A |
| Length | 10.36 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 38.5 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 265 mOhms |
| Rise Time | 165 ns |
| RoHS | Details |
| Series | FDPF18N50T |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Power MOSFET |
| Typical Turn-Off Delay Time | 95 ns |
| Typical Turn-On Delay Time | 55 ns |
| Unit Weight | 0.080072 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.9 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 90 ns |
| Forward Transconductance - Min: | 25 S |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 38.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Rds On - Drain-Source Resistance: | 265 mOhms |
| Rise Time: | 165 ns |
| Series: | FDPF18N50T |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 95 ns |
| Typical Turn-On Delay Time: | 55 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Resistance | 265 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Power Dissipation | 38.5 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220F |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V |
