BSS169
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см. техническую документацию
см. техническую документацию
140 руб.
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45 руб.
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Описание
Электроэлемент
Малосигнальный транзистор SIPMOS (N-канальный режим истощения, высокое динамическое сопротивление)
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Depletion |
Configuration | 1 N-Channel |
Factory Pack Quantity | 6000 |
Fall Time | 27 ns |
Forward Transconductance - Min | 100 mS |
Height | 1.1 mm |
Id - Continuous Drain Current | 170 mA |
Length | 2.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | BSS169H6327XT BSS169H6327XTSA1 SP000702572 |
Pd - Power Dissipation | 360 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Qg - Gate Charge | 2.8 nC |
Rds On - Drain-Source Resistance | 2.9 Ohms |
Rise Time | 2.7 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 11 ns |
Typical Turn-On Delay Time | 2.9 ns |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | -2.9 V |
Width | 1.3 mm |
Brand: | Infineon Technologies |
Channel Mode: | Depletion |
Configuration: | Single |
Factory Pack Quantity: | 3000 |
Fall Time: | 27 ns |
Forward Transconductance - Min: | 0.2 S |
Id - Continuous Drain Current: | 170 mA |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOT-23-3 |
Part # Aliases: | SP000702572 BSS169H6327XT BSS169H6327XTSA1 |
Pd - Power Dissipation: | 360 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Qg - Gate Charge: | 2.1 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 2.9 Ohms |
Rise Time: | 2.7 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | SIPMOS Small Signal Transistor |
Typical Turn-Off Delay Time: | 11 ns |
Typical Turn-On Delay Time: | 2.9 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.9 V |
Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 396 КБ
Datasheet BSS169H6327XTSA1
pdf, 412 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов