SIHP22N60EF-GE3, EF Series MOSFET, Single - N-Channel, 600V, 19A, TO-220AB
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Описание
N-канал 600V 19A (Tc) 179W (Tc) сквозное отверстие TO-220AB
Технические параметры
| Configuration | Single |
| Continuous Drain Current (Id) | 19 A |
| Drain-Source Voltage (Vds) | 600 V |
| Fall Time | 25 ns |
| Gate-Source Voltage | 30 V |
| Mounting Type | Through Hole |
| ON Resistance (Rds(on)) | 158 mOhm |
| Operating Temperature Max. | 150 °C |
| Operating Temperature Min. | -55 °C |
| Package Type | TO-220AB |
| Packaging | Tape & Reel |
| Pins | 3 |
| Power Dissipation (Pd) | 179 W |
| Reflow Temperature Max. | 260 °C |
| Rise Time | 21 ns |
| Transistor Polarity | N-Channel |
| Turn-OFF Delay Time | 58 ns |
| Turn-ON Delay Time | 15 ns |
| Base Product Number | SIHP22 -> |
| Current - Continuous Drain (Id) @ 25В°C | 19A (Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 100V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 179W (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 11A, 10V |
| RoHS Status | ROHS3 Compliant |
| Series | EF -> |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Resistance | 182 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 179 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Width | 4.65mm |
| Вес, г | 2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
