STGD25N40LZAG, IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Automotive-Grade Internally Clamped IGBTsSTMicroelectronics Automotive-Grade Internally Clamped IGBTs use the advanced PowerMESH™ technology optimized for coil driving in harsh environments in automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. The ESD-protected logic level gate input and an integrated gate resistor mean no external protection circuitry is required.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| Collector-Emitter Saturation Voltage: | 1.25 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 25 A |
| Continuous Collector Current Ic Max: | 25 A |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gate-Emitter Leakage Current: | 625 uA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -12 V, 16 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 150 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Qualification: | AEC-Q101 |
| Series: | STGD25N40LZAG |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 539 КБ
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