DN2450K4-G, MOSFET MOSFET DEPLETION MODE 500V 10 Ohms
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
260 руб.
от 25 шт. —
210 руб.
от 100 шт. —
178 руб.
Добавить в корзину 1 шт.
на сумму 260 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trans MOSFET N-CH 500V 0.35A 3-Pin(2+Tab) DPAK T/R
Технические параметры
Brand: | Microchip Technology |
Channel Mode: | Depletion |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Forward Transconductance - Min: | 500 S |
Id - Continuous Drain Current: | 350 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 2.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 10 Ohms |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Automotive | No |
Channel Mode | Depletion |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.35 |
Maximum Diode Forward Voltage (V) | 1.8 |
Maximum Drain Source Resistance (mOhm) | 10000@0V |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum IDSS (uA) | 700000(Min) |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 2500 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 1 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | VDMOS |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 15(Max) |
Typical Input Capacitance @ Vds (pF) | 150@25V |
Typical Output Capacitance (pF) | 40 |
Typical Reverse Recovery Time (ns) | 800 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 15@25V |
Typical Rise Time (ns) | 20(Max) |
Typical Turn-Off Delay Time (ns) | 15(Max) |
Typical Turn-On Delay Time (ns) | 15(Max) |
Current - Continuous Drain (Id) @ 25В°C | 350mA(Tj) |
Drain to Source Voltage (Vdss) | 500V |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
FET Feature | Depletion Mode |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
Manufacturer | Microchip Technology |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
Power Dissipation (Max) | 2.5W(Ta) |
Rds On (Max) @ Id, Vgs | 10Ohm @ 300mA, 0V |
Series | - |
Supplier Device Package | TO-252, (D-Pak) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | - |
Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 626 КБ
Datasheet DN2450K4-G
pdf, 624 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов