IGP20N60H3
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Описание
IGBT Gate Drives with Murata DC-DC Converters
IGBTs are commonly used in high power inverter and converter circuits and can require significant isolated gate drive power to switch optimally. Small isolated DC/DC converters can provide that power. The same considerations apply in principal to gate drives for silicon, silicon carbide and gallium nitride MOSFETs.
IGBTs are commonly used in high power inverter and converter circuits and can require significant isolated gate drive power to switch optimally. Small isolated DC/DC converters can provide that power. The same considerations apply in principal to gate drives for silicon, silicon carbide and gallium nitride MOSFETs.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000702544 IGP2N6H3XK IGP20N60H3XKSA1 |
| Pd - Power Dissipation: | 170 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | HighSpeed 3 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
Техническая документация
Datasheet
pdf, 2053 КБ
