IKY40N120CS6XKSA1
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Описание
1200V TRENCHSTOP™ IGBT6
Infineon Technologies 1200V TRENCHSTOP™ IGBT6 are designed to meet requirements of high efficiency, lower conduction losses, and switching losses. These TRENCHSTOP IGBT6 feature low gate charge, low Electromagnetic Interference (EMI), easy paralleling capability, high efficiency in hard switching, and resonant topologies. The TRENCHSTOP IGBT6 is released in 2 product families, low conduction losses optimized S6 series and improved switching losses H6 series. These IGBT6 are plug-and-play replacements of predecessor HighSpeed3 H3 IGBT. The TRENCHSTOP IGBT6 implement the trench and fieldstop technology copacked with soft and fast recovery anti-parallel diode. These 1200V TRENCHSTOP IGBT6 achieve easy paralleling capability due to positive temperature coefficient in V CEsat. Typical applications include industrial UPS, energy storage, three-level solar string inverter, and welding.
Infineon Technologies 1200V TRENCHSTOP™ IGBT6 are designed to meet requirements of high efficiency, lower conduction losses, and switching losses. These TRENCHSTOP IGBT6 feature low gate charge, low Electromagnetic Interference (EMI), easy paralleling capability, high efficiency in hard switching, and resonant topologies. The TRENCHSTOP IGBT6 is released in 2 product families, low conduction losses optimized S6 series and improved switching losses H6 series. These IGBT6 are plug-and-play replacements of predecessor HighSpeed3 H3 IGBT. The TRENCHSTOP IGBT6 implement the trench and fieldstop technology copacked with soft and fast recovery anti-parallel diode. These 1200V TRENCHSTOP IGBT6 achieve easy paralleling capability due to positive temperature coefficient in V CEsat. Typical applications include industrial UPS, energy storage, three-level solar string inverter, and welding.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 600 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4 |
| Packaging: | Tube |
| Part # Aliases: | IKY40N120CS6 SP001666620 |
| Pd - Power Dissipation: | 500 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Trenchstop IGBT6 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | 25V |
| Maximum Power Dissipation | 5 kW |
| Number of Transistors | 1 |
| Package Type | PG-TO247 |
| Pin Count | 3 |
