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IPT012N06NATMA1, MOSFET TRENCH 40 - 100V

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1 720 руб.

от 10 шт. — 1 450 руб.

от 25 шт. — 1 330 руб.

от 100 шт. — 1 091.37 руб.

Добавить в корзину 1 шт. на сумму 1 720 руб.

Номенклатурный номер: 8004635580

Артикул: IPT012N06NATMA1

Бренд: INFINEON TECHNOLOGIES AG.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

USB-C Chargers & Adapters
Infineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.

Технические параметры

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	23 ns
Forward Transconductance - Min:	240 S
Id - Continuous Drain Current:	313 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PG-HSOF-8
Packaging:	Reel, Cut Tape
Part # Aliases:	IPT012N06N SP001637074
Pd - Power Dissipation:	214 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	106 nC
Rds On - Drain-Source Resistance:	1.2 mOhms
Rise Time:	27 ns
Subcategory:	MOSFETs
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	313 A
Maximum Drain Source Voltage	60 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PG-HSOF-8
Pin Count	8