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RGW60TK65DGVC11, IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT

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450 шт., срок 6-8 недель

1 790 руб.

от 10 шт. — 1 480 руб.

от 25 шт. — 1 380 руб.

от 100 шт. — 1 126.90 руб.

Добавить в корзину 1 шт. на сумму 1 790 руб.

Альтернативные предложения2

Номенклатурный номер: 8004638643

Артикул: RGW60TK65DGVC11

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Field Stop Trench IGBTs ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

Технические параметры

Brand:	ROHM Semiconductor
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
Continuous Collector Current at 25 C:	33 A
Continuous Collector Current Ic Max:	33 A
Factory Pack Quantity:	450
Gate-Emitter Leakage Current:	200 nA
Manufacturer:	ROHM Semiconductor
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package / Case:	TO-3PFM
Packaging:	Tube
Part # Aliases:	RGW60TK65D
Pd - Power Dissipation:	72 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Collector Emitter Saturation Voltage	1.5В
Collector Emitter Voltage Max	650В
Continuous Collector Current	33А
Power Dissipation	72Вт
Количество Выводов	3вывод(-ов)
Максимальная Рабочая Температура	175°C
Монтаж транзистора	Through Hole
Стиль Корпуса Транзистора	TO-3PFM