Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Toshiba › TK11S10N1L,LXHQ, MOSFET PD=65W F=1MHZ AEC-Q101

TK11S10N1L,LXHQ, MOSFET PD=65W F=1MHZ AEC-Q101

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3816 шт., срок 7-9 недель

270 руб.

Добавить в корзину 1 шт. на сумму 270 руб.

Номенклатурный номер: 8004639177

Артикул: TK11S10N1L,LXHQ

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	8 ns
Id - Continuous Drain Current:	11 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Pd - Power Dissipation:	65 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	28 mOhms
Rise Time:	13 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	29 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Вес, г	0.36