Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Vishay › SI7450DP-T1-E3, MOSFET RECOMMENDED ALT SI7450DP

SI7450DP-T1-E3, MOSFET RECOMMENDED ALT SI7450DP

Изображения служат только для ознакомления,
см. техническую документацию

760 руб.

от 10 шт. — 600 руб.

от 100 шт. — 464 руб.

от 250 шт. — 418.62 руб.

Добавить в корзину 1 шт. на сумму 760 руб.

Номенклатурный номер: 8004641017

Артикул: SI7450DP-T1-E3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO EP T/R

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	5.3 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-SO-8
Part # Aliases:	SI7450DP-E3
Pd - Power Dissipation:	5.2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	42 nC
Rds On - Drain-Source Resistance:	80 mOhms
Series:	SI7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Automotive	Unknown
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	3.2
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	5.3
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	80@10V
Maximum Drain Source Voltage (V)	200
Maximum Gate Resistance (Ohm)	1.5
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4.5
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	65
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	5200
Maximum Power Dissipation on PCB @ TC=25°C (W)	5.2
Maximum Pulsed Drain Current @ TC=25°C (A)	40
Minimum Gate Resistance (Ohm)	0.2
Minimum Gate Threshold Voltage (V)	2
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	Unknown
Process Technology	TrenchFET
Product Category	Power MOSFET
Supplier Package	PowerPAK SO EP
Typical Diode Forward Voltage (V)	0.75
Typical Fall Time (ns)	25
Typical Gate Charge @ 10V (nC)	34
Typical Gate Charge @ Vgs (nC)	34@10V
Typical Gate Plateau Voltage (V)	4.7
Typical Gate to Drain Charge (nC)	12
Typical Gate to Source Charge (nC)	7.5
Typical Output Capacitance (pF)	75
Typical Reverse Recovery Time (ns)	70
Typical Rise Time (ns)	20
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	14
Вес, г	0.51