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SI8457DB-T1-E1, MOSFET -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6

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150 руб.

от 10 шт. — 130 руб.

от 100 шт. — 86 руб.

от 500 шт. — 67.12 руб.

Добавить в корзину 1 шт. на сумму 150 руб.

Номенклатурный номер: 8004641024

Артикул: SI8457DB-T1-E1

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

TrenchFET® MOSFETs
Vishay / Siliconix TrenchFET ® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK ® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	210 ns
Forward Transconductance - Min:	26 S
Id - Continuous Drain Current:	10.2 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	MicroFoot-4
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	2.7 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	93 nC
Rds On - Drain-Source Resistance:	15 mOhms
Rise Time:	60 ns
Series:	SI8
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	300 ns
Typical Turn-On Delay Time:	27 ns
Vds - Drain-Source Breakdown Voltage:	12 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Вес, г	0.05