CNY75C, Transistor Output Optocouplers Phototransistor Out Single CTR 160-320%
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Описание
Opto-electronics\Optocouplers/Photocouplers\Transistor Output Optocouplers
CNY75x Optocoupler, Phototransistor OutputThe Vishay Semiconductors CNY75A, CNY75B, and CNY75GB consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. Vishay Semiconductors CNY75x optocouplers are designed for a variety of applications, including switch-mode power supplies, line receivers, computer peripheral interface, microprocessor system interface, and circuits for safe protective separation against electrical shock. These Vishay Semiconductors optocouplers feature rated isolation voltage (RMS includes DC) of Viowm = 600 Vrms (848 V peak), rated recurring peak voltage (repetitive) of Viorm = 600 Vrms, rated impulse voltage (transient overvoltage) of Viotm = 6kVpeak, and isolation test voltage (partial discharge test voltage) of Vpd = 1.6kV
Технические параметры
Brand: | Vishay Semiconductors |
Configuration: | 1 Channel |
Current Transfer Ratio: | 320% |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
If - Forward Current: | 60 mA |
Isolation Voltage: | 5000 Vrms |
Manufacturer: | Vishay |
Maximum Collector Current: | 50 mA |
Maximum Collector Emitter Saturation Voltage: | 0.3 V |
Maximum Collector Emitter Voltage: | 70 V |
Maximum Operating Temperature: | +110 C |
Minimum Operating Temperature: | -55 C |
Number of Channels: | 1 Channel |
Output Type: | NPN Phototransistor |
Package/Case: | PDIP-6 |
Packaging: | Tube |
Pd - Power Dissipation: | 200 mW |
Product Category: | Transistor Output Optocouplers |
Product Type: | Transistor Output Optocouplers |
Series: | CNY |
Subcategory: | Optocouplers |
Vf - Forward Voltage: | 1.6 V |
Vr - Reverse Voltage: | 5 V |
Base Product Number | CNY75 -> |
Current - DC Forward (If) (Max) | 60mA |
Current - Output / Channel | 50mA |
Current Transfer Ratio (Max) | 320% @ 10mA |
Current Transfer Ratio (Min) | 160% @ 10mA |
ECCN | EAR99 |
HTSUS | 8541.40.8000 |
Input Type | DC |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Number of Channels | 1 |
Operating Temperature | -55В°C ~ 110В°C |
Output Type | Transistor with Base |
Package | Tube |
Package / Case | 6-DIP (0.300"", 7.62mm) |
Rise / Fall Time (Typ) | 4.2Вµs, 4.7Вµs |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 6-DIP |
Turn On / Turn Off Time (Typ) | 7Вµs, 5Вµs |
Vce Saturation (Max) | 300mV |
Voltage - Forward (Vf) (Typ) | 1.25V |
Voltage - Isolation | 5000Vrms |
Voltage - Output (Max) | 70V |
Automotive | No |
Maximum Collector Current - (mA) | 50 |
Maximum Collector-Emitter Saturation Voltage - (mV) | 300 |
Maximum Collector-Emitter Voltage - (V) | 70 |
Maximum Current Transfer Ratio - (%) | 320 |
Maximum Forward Voltage - (V) | 1.6 |
Maximum Power Dissipation - (mW) | 200 |
Maximum Reverse Voltage - (V) | 5 |
Military | No |
Minimum Current Transfer Ratio - (%) | 160 |
Minimum Isolation Voltage - (Vrms) | 5000 |
Number of Channels per Chip | 1 |
Operating Temperature - (??C) | -55~110 |
Pin Count | 6 |
Standard Package Name | DIP |
Supplier Package | PDIP |
Вес, г | 0.4 |
Техническая документация
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