SI2366DS-T1-GE3, MOSFET 30V Vds 20V Vgs SOT-23

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Номенклатурный номер: 8004641775

Артикул: SI2366DS-T1-GE3

Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Resistance	42 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.1 W
Minimum Gate Threshold Voltage	1.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Width	1.4mm
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5.8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	5.8(Tc)
Maximum Drain Source Resistance (mOhm)	36@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1250
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Fall Time (ns)	20
Typical Gate Charge @ 10V (nC)	6.4
Typical Gate Charge @ Vgs (nC)	6.4@10V\|3.2@4.5V
Typical Gate Threshold Voltage (V)	10
Typical Input Capacitance @ Vds (pF)	335@15V
Typical Rise Time (ns)	48
Typical Turn-Off Delay Time (ns)	18
Typical Turn-On Delay Time (ns)	32
Вес, г	0.35