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SI7655DN-T1-GE3, MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III

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460 руб.

от 10 шт. — 370 руб.

от 100 шт. — 274 руб.

от 250 шт. — 245.82 руб.

Добавить в корзину 1 шт. на сумму 460 руб.

Номенклатурный номер: 8004641783

Артикул: SI7655DN-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Industrial Power Solutions
Vishay offers one of the industry"s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	35 ns
Forward Transconductance - Min:	90 S
Id - Continuous Drain Current:	40 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-50 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-1212-8
Part # Aliases:	SI7655DN-GE3
Pd - Power Dissipation:	57 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	225 nC
Rds On - Drain-Source Resistance:	3 mOhms
Rise Time:	45 ns
Series:	SI7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	45 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	40
Maximum Drain Source Resistance (mOhm)	3.6@10V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1.1
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	4800
Minimum Operating Temperature (°C)	-50
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	NRND
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	PowerPAK 1212
Supplier Package	PowerPAK 1212
Typical Fall Time (ns)	35\|25
Typical Gate Charge @ 10V (nC)	150
Typical Gate Charge @ Vgs (nC)	150@10V\|72@4.5V
Typical Input Capacitance @ Vds (pF)	6600@10V
Typical Rise Time (ns)	45\|10
Typical Turn-Off Delay Time (ns)	100\|110
Typical Turn-On Delay Time (ns)	45\|13
Вес, г	0.92