Главная › Электронные компоненты › Транзисторы › Биполярные (BJTs) › ON Semiconductor › 2N5195G, Bipolar Transistors - BJT 4A 80V 40W PNP

2N5195G, Bipolar Transistors - BJT 4A 80V 40W PNP

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230 руб.

от 10 шт. — 180 руб.

от 100 шт. — 138 руб.

от 500 шт. — 114 руб.

Добавить в корзину 1 шт. на сумму 230 руб.

Номенклатурный номер: 8004651303

Артикул: 2N5195G

Бренд: ON Semiconductor***

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Trans GP BJT PNP 80V 4A 40000mW 3-Pin (3 Tab) TO-225 Box

Технические параметры

Brand:	onsemi
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	1.4 V
Configuration:	Single
Continuous Collector Current:	4 A
DC Collector/Base Gain hFE Min:	20
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	2 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	4 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package/Case:	TO-225-3
Packaging:	Bulk
Pd - Power Dissipation:	40 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	2N5195
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Through Hole
Material	Si
Maximum Collector Base Voltage (V)	80
Maximum Collector Cut-Off Current (nA)	100000
Maximum Collector-Emitter Saturation Voltage (V)	0.6 0.15A 1.5A\|1.4 1A 4A
Maximum Collector-Emitter Voltage (V)	80
Maximum DC Collector Current (A)	4
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	40000
Maximum Transition Frequency (MHz)	2(Min)
Minimum DC Current Gain	20 1.5A 2V\|10 4A 2V
Minimum Operating Temperature (°C)	-65
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Box
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Bipolar Power
Supplier Package	TO-225
Tab	Tab
Type	PNP
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Voltage	80 V
Maximum DC Collector Current	4 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	1 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	40 W
Mounting Type	Through Hole
Package Type	TO-225AA
Transistor Configuration	Single
Transistor Type	PNP
Вес, г	0.68