IS66WVC4M16ECLL-7010BLI, SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL

IS66WVC4M16ECLL-7010BLI, SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL
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1 590 руб.
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от 25 шт.1 310 руб.
от 100 шт.1 152 руб.
Добавить в корзину 1 шт. на сумму 1 590 руб.
Номенклатурный номер: 8004652847
Артикул: IS66WVC4M16ECLL-7010BLI

Описание

Semiconductors\Memory ICs\SRAM
Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devices are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Технические параметры

Access Time: 70 ns
Brand: ISSI
Factory Pack Quantity: Factory Pack Quantity: 480
Manufacturer: ISSI
Maximum Clock Frequency: 104 MHz
Maximum Operating Temperature: +85 C
Memory Size: 64 Mbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organization: 4 M x 16
Package / Case: VFBGA-54
Product Category: SRAM
Product Type: SRAM
Series: IS66WVC4M16EALL
Subcategory: Memory & Data Storage
Supply Current - Max: 30 mA
Supply Voltage - Max: 1.95 V
Supply Voltage - Min: 1.7 V
Type: PSRAM(Pseudo SRAM)
Access Time 70 ns
Brand ISSI
Data Bus Width 16 bit
Factory Pack Quantity 480
Manufacturer ISSI
Maximum Clock Frequency 104 MHz
Maximum Operating Temperature +85 C
Memory Size 64 Mbit
Minimum Operating Temperature -40 C
Mounting Style SMD/SMT
Organization 4 M x 16
Package / Case VFBGA-54
Product Category DRAM
RoHS Details
Series IS66WVC4M16EALL
Supply Current - Max 30 mA
Supply Voltage - Max 1.95 V
Supply Voltage - Min 1.7 V
Type PSRAM
Вес, г 0.09

Техническая документация

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем