AS4C128M16D3LC-12BIN, DRAM DDR3, 2G, 1.35V, 96-BALL FBGA, 800MHZ, INDUSTRIAL TEMP - Tray

AS4C128M16D3LC-12BIN, DRAM DDR3, 2G, 1.35V, 96-BALL FBGA, 800MHZ, INDUSTRIAL TEMP - Tray
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см. техническую документацию
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Номенклатурный номер: 8004654191
Артикул: AS4C128M16D3LC-12BIN

Описание

Semiconductors\Memory ICs\DRAM
DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

Технические параметры

Access Time: 20 ns
Brand: Alliance Memory
Data Bus Width: 16 bit
Factory Pack Quantity: Factory Pack Quantity: 198
Manufacturer: Alliance Memory
Maximum Clock Frequency: 800 MHz
Maximum Operating Temperature: +95 C
Memory Size: 2 Gbit
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Organization: 128 M x 16
Packaging: Tray
Product Category: DRAM
Product Type: DRAM
Subcategory: Memory & Data Storage
Supply Current - Max: 80 mA
Supply Voltage - Max: 1.45 V
Supply Voltage - Min: 1.283 V
Type: SDRAM-DDR3L

Техническая документация

Datasheet
pdf, 1799 КБ

Дополнительная информация

Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем