APT40GT60BRG, IGBT Transistors FG, IGBT, 600V, 40A, TO-247, RoHS

Изображения служат только для ознакомления,
см. техническую документацию

2 780 руб.

от 10 шт. — 2 390 руб.

Добавить в корзину 1 шт. на сумму 2 780 руб.

Номенклатурный номер: 8004670897

Артикул: APT40GT60BRG

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

IGBT NPT 600V 80A 345W Through Hole TO-247 [B]

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.15 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	80 A
Continuous Collector Current:	80 A
Factory Pack Quantity: Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-20 V, +20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+150 C
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	345 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Tradename:	Thunderbolt IGBT
Base Product Number	APT40GT60 ->
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	160A
ECCN	EAR99
Gate Charge	200nC
HTSUS	8541.29.0095
IGBT Type	NPT
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	345W
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Series	Thunderbolt IGBTВ® ->
Supplier Device Package	TO-247 [B]
Switching Energy	828ВµJ (off)
Td (on/off) @ 25В°C	12ns/124ns
Test Condition	400V, 40A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max)	600V
Вес, г	38

pdf, 224 КБ

Мы рекомендуем