APT50GT120B2RG, IGBT Transistors IGBT NPT Medium Frequency Single 1200 V 50 A TO-247 MAX
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
IGBT NPT 1200V 94A 625W Through Hole
Технические параметры
Brand: | Microchip Technology |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 3.2 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 94 A |
Factory Pack Quantity: Factory Pack Quantity: | 1 |
Manufacturer: | Microchip |
Maximum Gate Emitter Voltage: | -30 V, 30 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Packaging: | Tube |
Pd - Power Dissipation: | 625 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Base Product Number | APT50GT120 -> |
Current - Collector (Ic) (Max) | 94A |
Current - Collector Pulsed (Icm) | 150A |
ECCN | EAR99 |
Gate Charge | 340nC |
HTSUS | 8541.29.0095 |
IGBT Type | NPT |
Input Type | Standard |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tube |
Package / Case | TO-247-3 |
Power - Max | 625W |
REACH Status | REACH Unaffected |
RoHS Status | RoHS Compliant |
Series | Thunderbolt IGBTВ® -> |
Switching Energy | 2330ВµJ (off) |
Td (on/off) @ 25В°C | 24ns/230ns |
Test Condition | 800V, 50A, 4.7Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 202 КБ
Datasheet APT50GT120B2RG
pdf, 201 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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