APT75GN60LDQ3G, IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-264

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Номенклатурный номер: 8004670905

Артикул: APT75GN60LDQ3G

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-264 Tube

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.45 V
Configuration:	Single
Continuous Collector Current at 25 C:	155 A
Continuous Collector Current Ic Max:	155 A
Continuous Collector Current:	155 A
Factory Pack Quantity: Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	600 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+175 C
Package / Case:	TO-264-3
Packaging:	Tube
Pd - Power Dissipation:	536 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Current - Collector (Ic) (Max)	155A
Current - Collector Pulsed (Icm)	225A
Gate Charge	485nC
IGBT Type	Trench Field Stop
Input Type	Standard
Manufacturer	Microsemi Corporation
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-264-3, TO-264AA
Packaging	Tube
Part Status	Active
Power - Max	536W
Series	-
Supplier Device Package	TO-264(L)
Switching Energy	2500ВµJ(on), 2140ВµJ(off)
Td (on/off) @ 25В°C	47ns/385ns
Test Condition	400V, 75A, 1 Ohm, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max)	600V
Вес, г	10.6