ZXMHC6A07N8TC, MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
ZXMH MOSFET H-BridgesDiodes Incorporated ZXMH MOSFET H-Bridges feature low on-resistance achievable with low gate drive. Diodes Incorporated ZXMH MOSFET H-Bridges provide 2 x N + 2 x P channels in a SOIC package and low voltage (V gs = 4.5V) gate drive. Diodes Inc ZXMH MOSFET H-Bridge devices are ideal for DC motor control and DC-AC inverter applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Quad |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2 ns, 5.8 ns |
| Forward Transconductance - Min: | 2.3 S, 1.8 S |
| Id - Continuous Drain Current: | 1.8 A, 1.42 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 4 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 870 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.2 nC, 5.7 nC |
| Rds On - Drain-Source Resistance: | 250 mOhms, 400 mOhms |
| Rise Time: | 1.4 ns, 2.3 ns |
| Series: | ZXMHC6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 2 N-Channel, 2 P-Channel |
| Typical Turn-Off Delay Time: | 4.9 ns, 13 ns |
| Typical Turn-On Delay Time: | 1.8 ns, 1.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.4 A, 1.8 A |
| Maximum Drain Source Resistance | 350 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.36 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 4 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Full Bridge |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 3.2 nC @ 10 V, 5.1 nC @ 10 V |
| Width | 4mm |
| Вес, г | 0.75 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
