IHW30N65R5XKSA1, IGBT Transistors HOME APPLIANCES 14
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Next Generation Reverse Conducting IGBTsInfineon Technologies 650V/1200V/1350V/1600V Next Generation Reverse Conducting IGBTs combine the performance of the TRENCHSTOP™ family with the innovative reverse conducting RC-H IGBT technology to create a generation of best-in-class devices. The devices provide increased switching frequency, low power dissipation, and improved thermal management for higher reliability.
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.35 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 60 A |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | IHW30N65R5 SP001273470 |
Pd - Power Dissipation: | 176 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | IGBT RC Soft Switching |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 60 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 176 W |
Package Type | PG-TO247-3 |
Pin Count | 3 |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 90A |
Gate Charge | 153nC |
IGBT Type | Trench |
Input Type | Standard |
Manufacturer | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -40В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power - Max | 176W |
Reverse Recovery Time (trr) | 95ns |
Series | TrenchStopв(ў |
Supplier Device Package | PG-TO247-3 |
Switching Energy | 850ВµJ(on), 240ВµJ(off) |
Td (on/off) @ 25В°C | 29ns/220ns |
Test Condition | 400V, 30A, 13Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Вес, г | 6.05 |
Техническая документация
Datasheet
pdf, 2036 КБ
Datasheet IHW30N65R5XKSA1
pdf, 2100 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов