IKW50N65SS5XKSA1, IGBT Transistors SIC DISCRETE
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTsInfineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction, and PCB bill of material cost optimization. Infineon S5 IGBTs are packed with features to help designers achieve goals without the need to increase circuit complexity.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IKW50N65SS5 SP001668430 |
| Pd - Power Dissipation: | 274 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Trenchstop IGBT5 S5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP ~ CoolSiC |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 50 A |
| Maximum Gate Emitter Voltage | 15V |
| Maximum Power Dissipation | 274 W |
| Number of Transistors | 2 |
| Package Type | PG-TO247-3 |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1571 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
