IKZ75N65EH5XKSA1
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Описание
Электроэлемент
IGBT, SINGLE, 650V, 90A, TO-247; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Current - Collector (Ic) (Max) | 90A |
| Current - Collector Pulsed (Icm) | 300A |
| Gate Charge | 166nC |
| IGBT Type | - |
| Input Type | Standard |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 395W |
| Reverse Recovery Time (trr) | 58ns |
| Series | TrenchStopв(ў 5 |
| Standard Package | 240 |
| Supplier Device Package | PG-TO247-4 |
| Switching Energy | 680ВµJ(on), 430ВµJ(off) |
| Td (on/off) @ 25В°C | 26ns/347ns |
| Test Condition | 400V, 37.5A, 10 Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 90 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4 |
| Packaging: | Tube |
| Part # Aliases: | IKZ75N65EH5 SP001160046 |
| Pd - Power Dissipation: | 395 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | TRENCHSTOP 5 H5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Gate Emitter Voltage | ±20 V, ±30V |
| Maximum Power Dissipation | 395 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Pin Count | 4 |
| Вес, г | 7.077 |
Техническая документация
Datasheet IKZ75N65EH5
pdf, 2169 КБ
Datasheet IKZ75N65EH5XKSA1
pdf, 2166 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
