IKZA50N65SS5XKSA1, IGBT Transistors SIC DISCRETE
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
TRENCHSTOP™ 5 IGBTsInfineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | PG-TO-247-4 |
| Packaging: | Tube |
| Part # Aliases: | IKZA50N65SS5 SP004038212 |
| Pd - Power Dissipation: | 274 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Trenchstop 5 S5 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP ~ CoolSiC |
| Collector Emitter Saturation Voltage | 1.35В |
| Collector Emitter Voltage Max | 650В |
| Continuous Collector Current | 80А |
| Power Dissipation | 274Вт |
| Количество Выводов | 4вывод(-ов) |
| Линейка Продукции | TRENCHSTOP 5 S5 CoolSiC Gen VI |
| Максимальная Рабочая Температура | 175°C |
| Монтаж транзистора | Through Hole |
| Стиль Корпуса Транзистора | TO-247 |
| Вес, г | 1 |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
