IPB60R060P7ATMA1, MOSFET HIGH POWER_NEW
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
600V CoolMOS™ P7 MOSFETsInfineon 600V CoolMOS™ P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
Технические параметры
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 4 ns |
Id - Continuous Drain Current: | 48 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Part # Aliases: | IPB60R060P7 SP001664882 |
Pd - Power Dissipation: | 164 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 67 nC |
Rds On - Drain-Source Resistance: | 49 mOhms |
Rise Time: | 12 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 79 ns |
Typical Turn-On Delay Time: | 23 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Channel Type | N Channel |
Drain Source On State Resistance | 0.049Ом |
Power Dissipation | 164Вт |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | CoolMOS P7 |
Максимальная Рабочая Температура | 150 C |
Монтаж транзистора | Surface Mount |
Напряжение Измерения Rds(on) | 10В |
Напряжение Истока-стока Vds | 600В |
Непрерывный Ток Стока | 48А |
Полярность Транзистора | N Канал |
Пороговое Напряжение Vgs | 3.5В |
Рассеиваемая Мощность | 164Вт |
Сопротивление во Включенном Состоянии Rds(on) | 0.049Ом |
Стиль Корпуса Транзистора | TO-263(D2PAK) |
Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Current - Continuous Drain (Id) @ 25В°C | 48A(Tc) |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2895pF @ 400V |
Manufacturer | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 164W(Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 15.9A, 10V |
Series | CoolMOSв(ў P7 |
Supplier Device Package | DВІPAK(TO-263AB) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 800ВµA |
Channel Mode | Enhancement |
Maximum Continuous Drain Current | 151 A |
Maximum Drain Source Resistance | 0.06 O |
Maximum Drain Source Voltage | 650 V |
Maximum Gate Threshold Voltage | 4V |
Number of Elements per Chip | 1 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Вес, г | 517 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов