2SC3326-A,LF, Bipolar Transistors - BJT Transistor for Low Freq. Amplification
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Bipolar TransistorsToshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.
Технические параметры
| Brand: | Toshiba |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 42 mV |
| Configuration: | Single |
| DC Collector/Base Gain hFE Min: | 200 |
| DC Current Gain hFE Max: | 1200 |
| Emitter- Base Voltage VEBO: | 25 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 30 MHz |
| Manufacturer: | Toshiba |
| Maximum DC Collector Current: | 300 mA |
| Maximum Operating Temperature: | +125 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | TO-236-3 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Series: | 2SC3326 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Base Product Number | HN2D02 -> |
| Current - Collector (Ic) (Max) | 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V |
| ECCN | EAR99 |
| Frequency - Transition | 30MHz |
| HTSUS | 8541.21.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 125В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 150mW |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | TO-236 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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