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TJ90S04M3L,LQ, MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=180W F=1MHZ

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13363 шт., срок 6-8 недель

600 руб.

Добавить в корзину 1 шт. на сумму 600 руб.

Номенклатурный номер: 8004726881

Артикул: TJ90S04M3L,LQ

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSVI Small Signal MOSFETs
Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	426 ns
Id - Continuous Drain Current:	90 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Pd - Power Dissipation:	180 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	172 nC
Rds On - Drain-Source Resistance:	4.3 mOhms
Rise Time:	76 ns
Series:	TJ20A10M3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSVI
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	1305 ns
Typical Turn-On Delay Time:	94 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.36