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SI7998DP-T1-GE3, MOSFET 30V Vds 20V Vgs PowerPAK SO-8

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450 руб.

от 10 шт. — 350 руб.

от 100 шт. — 254 руб.

от 500 шт. — 201.28 руб.

Добавить в корзину 1 шт. на сумму 450 руб.

Номенклатурный номер: 8004728718

Артикул: SI7998DP-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	10 ns, 13 ns
Forward Transconductance - Min:	45 S, 71 S
Id - Continuous Drain Current:	25 A, 30 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	PowerPAK-SO-8
Part # Aliases:	SI7998DP-GE3
Pd - Power Dissipation:	22 W, 40 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	26 nC, 48 nC
Rds On - Drain-Source Resistance:	9.3 mOhms, 5.3 mOhms
REACH - SVHC:	Details
Rise Time:	15 ns, 17 ns
Series:	SI7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	22 ns, 35 ns
Typical Turn-On Delay Time:	20 ns, 26 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Вес, г	0.51