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SI1036X-T1-GE3, MOSFET 30V Vds 8V Vgs SC89-6

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120 руб.

от 10 шт. — 91 руб.

от 100 шт. — 48 руб.

от 1000 шт. — 30.70 руб.

Добавить в корзину 1 шт. на сумму 120 руб.

Номенклатурный номер: 8004729405

Артикул: SI1036X-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Технические параметры

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	11 ns
Forward Transconductance - Min:	7.5 S
Id - Continuous Drain Current:	610 mA
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SC-89-6
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	220 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	2 nC
Rds On - Drain-Source Resistance:	540 mOhms
Rise Time:	13 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	6 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Вес, г	0.03