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SI8472DB-T2-E1, MOSFET 20V Vds 8V Vgs MICRO FOOT 1 x 1

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130 руб.

от 10 шт. — 110 руб.

от 100 шт. — 76 руб.

от 500 шт. — 59.22 руб.

Добавить в корзину 1 шт. на сумму 130 руб.

Номенклатурный номер: 8004729425

Артикул: SI8472DB-T2-E1

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R DS(on) ) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	4.5 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	MicroFoot-4
Pd - Power Dissipation:	1.8 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	18 nC
Rds On - Drain-Source Resistance:	44 mOhms
Series:	SI8
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Configuration	Single Dual Source
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	0.9
Maximum Continuous Drain Current (A)	3.3
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	44@4.5V
Typical Gate Charge @ Vgs (nC)	6.8@4.5V\|12@8V
Maximum Power Dissipation (mW)	780
Typical Fall Time (ns)	10
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	30
Typical Turn-On Delay Time (ns)	7
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Automotive	No
Standard Package Name	BGA
Supplier Package	Micro Foot
Pin Count	4
Military	No
Mounting	Surface Mount
Package Height	0.26
Package Length	0.96
Package Width	0.96
PCB changed	4
Вес, г	0.08