NVHL160N120SC1, MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel,
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
1200V EliteSiC (Silicon Carbide) MOSFETsonsemi 1200V EliteSiC (Silicon Carbide) MOSFETs feature completely new technology and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and operate at -55°C to 175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are best suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, On-Board chargers (OBCs), motor control, industrial power supplies, and server power supplies.
Технические параметры
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 3 S |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3LD |
| Packaging: | Tube |
| Pd - Power Dissipation: | 119 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Rds On - Drain-Source Resistance: | 224 mOhms |
| Rise Time: | 19 ns |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -15 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.3 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Resistance | 0.16 Ω |
| Maximum Drain Source Voltage | 1200 V |
| Maximum Gate Threshold Voltage | 4.3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247-4 |
| Pin Count | 4 |
| Series | NVH |
| Transistor Material | SiC |
| Вес, г | 6 |
