GRF5510, RF Amplifier High Linearity Power Amplifier, OP1dB 32.0 dBm; 0.88 - 0.96 GHz
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Описание
Semiconductors\Wireless & RF Integrated Circuits\RF Amplifier
GRF55x High Linearity Power AmplifiersGRF55x High Linearity Power Amplifiers are optimized to deliver excellent P1db, Adjacent Channel Leakage Ratio (ACLR), and IM3 performance. These amplifiers are members of the externally matched linear amplifiers that cover a range of frequencies ranging from 660MHz to 2700MHz. The GRF55x power amplifiers operate at a -40°C to 85°C temperature range and stored at -65°C to 150°C temperature range. Typical applications include cellular boosters, automotive compensators, customer premise equipment, and picocell/femtocell.
Технические параметры
| Brand: | Guerrilla RF |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Gain: | 27 dB |
| Manufacturer: | Guerrilla RF |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| NF - Noise Figure: | 4.5 dB |
| Number of Channels: | 1 Channel |
| OIP3 - Third Order Intercept: | 51 dBm |
| Operating Frequency: | 880 MHz to 960 MHz |
| Operating Supply Current: | 210 mA |
| Operating Supply Voltage: | 5 V |
| P1dB - Compression Point: | 32 dBm |
| Package / Case: | QFN-16 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 850 mW |
| Product Category: | RF Amplifier |
| Product Type: | RF Amplifier |
| Series: | GRF5510 |
| Subcategory: | Wireless & RF Integrated Circuits |
| Technology: | InGaP |
| Test Frequency: | 920 MHz |
| Type: | Power Amplifiers |
Техническая документация
Datasheet
pdf, 4019 КБ
Дополнительная информация
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