APT33GF120B2RDQ2G, IGBT Transistors IGBT NPT Low Frequency Combi 1200 V 33 A TO-247 MAX
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Trans IGBT Chip N-CH 1200V 64A 357000mW 3-Pin(3+Tab) T-MAX Tube
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 64 A |
| Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Packaging: | Tube |
| Pd - Power Dissipation: | 357 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Current - Collector (Ic) (Max) | 64A |
| Current - Collector Pulsed (Icm) | 75A |
| Gate Charge | 170nC |
| IGBT Type | NPT |
| Input Type | Standard |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 Variant |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 357W |
| Series | - |
| Switching Energy | 1.315mJ(on), 1.515mJ(off) |
| Td (on/off) @ 25В°C | 14ns/185ns |
| Test Condition | 800V, 25A, 4.3Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 473 КБ
Datasheet APT33GF120B2RDQ2G
pdf, 473 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
