APT25GT120BRDQ2G, IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 25 A TO-247
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Trans IGBT Chip N-CH 1200V 54A 347000mW 3-Pin(3+Tab) TO-247 Tube
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 54 A |
| Continuous Collector Current Ic Max: | 54 A |
| Continuous Collector Current: | 54 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 120 nA |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Operating Temperature Range: | -55 C to+150 C |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 347 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | Thunderbolt IGBT |
| Current - Collector (Ic) (Max) | 54A |
| Current - Collector Pulsed (Icm) | 75A |
| Gate Charge | 170nC |
| IGBT Type | NPT |
| Input Type | Standard |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Operating Temperature | -55В C ~ 150В C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 347W |
| Series | Thunderbolt IGBTВ(r) |
| Supplier Device Package | TO-247(B) |
| Switching Energy | 930ВuJ(on), 720ВuJ(off) |
| Td (on/off) @ 25В°C | 14ns/150ns |
| Test Condition | 800V, 25A, 5 Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.7V 15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 8.58 |
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
