APT25GT120BRG, IGBT Transistors IGBT NPT Medium Frequency Single 1200 V 25 A TO-247

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Номенклатурный номер: 8004809347

Артикул: APT25GT120BRG

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

IGBT NPT 1200V 54A 347W Through Hole TO-247 [B]

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	3.2 V
Configuration:	Single
Continuous Collector Current at 25 C:	54 A
Continuous Collector Current Ic Max:	54 A
Continuous Collector Current:	54 A
Factory Pack Quantity: Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	120 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-30 V, 30 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+150 C
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	347 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Tradename:	Thunderbolt IGBT
Base Product Number	APT25GT120 ->
Current - Collector (Ic) (Max)	54A
Current - Collector Pulsed (Icm)	75A
ECCN	EAR99
Gate Charge	170nC
HTSUS	8541.29.0095
IGBT Type	NPT
Input Type	Standard
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power - Max	347W
REACH Status	REACH Unaffected
RoHS Status	RoHS Compliant
Series	Thunderbolt IGBTВ® ->
Supplier Device Package	TO-247 [B]
Switching Energy	930ВµJ (on), 720ВµJ (off)
Td (on/off) @ 25В°C	14ns/150ns
Test Condition	800V, 25A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max)	1200V
Вес, г	38

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