APT45GP120BG, IGBT Transistors IGBT PT MOS 7 Single 1200 V 45 A TO-247

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Номенклатурный номер: 8004809441

Артикул: APT45GP120BG

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Brand:	Microchip Technology
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	3.3 V
Configuration:	Single
Continuous Collector Current at 25 C:	100 A
Continuous Collector Current Ic Max:	100 A
Continuous Collector Current:	100 A
Factory Pack Quantity: Factory Pack Quantity:	1
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Microchip
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Operating Temperature Range:	-55 C to+150 C
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	625 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Tradename:	POWER MOS 7 IGBT
Вес, г	38

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